ls , u nc. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn rf transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BFR106 description ? low noise figure nf = 2.5 db typ. @vce = 8 v, lc = 20 ma, f = 900 mhz ? high gain i s2ie i 2 = 10.5 db typ. @vce= 8 v,lc = 70 ma,f = 900 mhz applications ? designed for use in low noise .high-gain amplifiers and linear broadband amplifiers. absolute maximum ratings(ta=25'c) symbol vcbo vces vceo vebo lc ib pc tj tstg parameter collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @tc=25'c junction temperature storage temperature range value 20 20 15 3 100 12 0.7 150 -65-150 unit v v v v ma ma w "c ?c \s -\"^ ft--c>^ -^ ^' h | h* -ill marking u1 j u- l_jrjq / \p r-i) l _j? t^j- i 1 dim a b c d r. h k l m sot- 2 3 package 5 7t 3 c ii _^'j k* 1 : base 2: emitter 3; collector i ?u mm win 0,37 1.19 2, 10 0,39 1.78 2.65 1. 10 0. -!.5 0.076 max 0. 51 1. 50 2. 50 1.05 2.05 3, 05 1.30 0,61 0, 17s m nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to he both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn rf transistor BFR106 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo ices icbo iebo hfe fr cob pg pg i s21e 1 2 i s21e 1 2 nf nf parameter collector-emitter breakdown voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain current-gain?bandwidth product output capacitance power gain power gain insertion power gain insertion power gain noise figure noise figure conditions lc= 1ma; ib= 0 vce= 20v; vbe= 0 vcb=10v;ie=0 veb= 2v; lc= 0 lc= 70ma ; vce= 8v lc= 70ma ; vce= 8v; f= 500mhz |e=0;vcb=10v;f=1mhz lc= 70ma ; vce= 8v; f= 900mhz lc= 70ma ; vce= 8v; f= 1 .8ghz lc= 70ma ; vce= 8v; f= 900mhz lc= 70ma ; vce= 8v; f= 1 ,8ghz lc= 20ma ; vce= 8v; f= 900mhz lc= 20ma ; vce= 8v; f= 1 .8ghz min 15 40 3.5 typ. 5 0.95 12.5 7.5 10.5 5 2.5 4 max 100 0.1 10 220 1.5 unit v na ua ua ghz pf db db db db db db
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